Abstract
It is shown that it is possible to grow a continuous series of (GaSb)1 − x(Si2)x (x = 0−1) alloys on silicon substrates by the method of liquid-phase epitaxy from a tin solution—melt. The X-ray patterns and the spectral and current-voltage characteristics of the obtained p-Si-n-(GaSb)1 − x(Si2)x in the temperature range of 20–200°C are studied. An extended section of the type V ∞ exp(JaW) corresponding to the effect of injection-caused depletion is observed in the current-voltage characteristics.
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