Abstract
Using a self-consistent tight-binding calculation, we show the theoretical possibility of band-offset control by deposition of thin group-IV interlayers at (110) III-V semiconductor heterojunctions. We present a study of the effect of Si and Ge interlayers in AlAs/GaAs (110) heterojunctions, showing how the band discontinuities are sensitive to the interlayer thickness. Recent experimental results are in very good agreement with the thickness dependence of the band-offset change. Our study shows clearly that in (110) semiconductor heterojunctions, the valence- and conduction-band offset can be tuned with use of thin interlayers at the interface.
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