Abstract
The possibility that large electronic correlation effects produce a semiconducting surface-state spectrum for the $\mathrm{Si}{\ensuremath{-}T}_{4}$ adatom model of the $\mathrm{SiC}(0001)\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}$ surface is discussed. We argue that a Hubbard model, with parameters obtained from local-density calculations, provides a qualitatively correct account of the excitation spectra inferred from angle-resolved photoemission and inverse-photoemission experiments. The Hubbard $U$ parameter obtained in local-density-functional calculations for the Si-adatom dangling bond on SiC(0001) is 1.6 eV.
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