Abstract
Of the three main surface analysis techniques: SIMS (Secondary Ion Mass Spectrometry), XPS (X-ray Photoelectron Spectroscopy) and AES (electron induced Auger Electron Spectroscopy), both SIMS and AES have lateral resolution in the 50 nm range [1]. Yet only XPS makes use of the wealth of chemical shift information. Recent publications on radiation damage [2,3] estimated (considering only microscopic causes of the damage) that for the sanie lateral resolution and induced damage, XPS is one to two orders of magnitude more sensitive then AES. This is mainly due to the intrinsic difference in the signal/background ratio of the two techniques, which is 10 to 100 for XPS and 0.1 to 1 for AES. Taking into account macroscopic damage, such as local heating and charging, the advantages of XPS are even greater, particularly for polymers and other radiation sensitive materials. Experimental investigation is required, however, to fully assess the advantages of an XPS microscope over other techniques.
Published Version
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