Abstract
Substantial extensions of the shorter of two positron lifetimes in p-type silicon upon proton irradiations have been observed, showing that some induced defects can act as traps for positrons. The mean electron density of the defect has been found to be about 30 per cent less than that in the perfect part of the crystal. The result demonstrates that the positron-lifetime measurement is a useful tool for studying defects in semiconductors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
