Abstract
Positron lifetime spectra were measured on Xe ion implanted amorphous SiO2 as a function of positron energy by using a variable-energy pulsed positron beam. In the lifetime spectra of the unimplanted sample, a long-lived (τ ∼ 1.6 ns) component, which can be attributed to pick-off annihilation of orthopositronium, has been observed with high intensity. A drastic decrease in the orthopositronium intensity, which indicates inhibition of positronium formation by charged defects, was found in the spectra of the ion-implanted samples. The lower detection limit of the defects of the ion implanted SiO2 was estimated from a rate equation.
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