Abstract
In this paper, we report positron lifetime results obtained under high-power steady-state and transient optical excitation. We present a model for analysing the results. The method has been applied to vacancy clusters in natural diamond, for which we self-consistently analyse optoelectronic constants such as optical absorption cross-section and hole recombination cross-section. The temperature dependences of transient and steady-state measurements are studied, suggesting the possibility of analysing the positron trapping to extended defects and vacancy clusters in semiconductors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
