Positron Lifetime in Elemental Semiconductors in the Generalized Gradient Approximation

Abstract

Positron lifetimes in bulk elemental semiconductors diamond, Si and Ge are calculated in this work. The electron density is determined from the empirical pseudopotential method. The positron density is calculated in the point-core approximation. The electron–positron correlation potential and the enhancement factor are treated in the generalised gradient approximation. The calculated positron lifetimes are in good agreement with experiments.