Abstract
The charge of divacancies in undoped float-zone silicon has been investigated as a function of photon energies between 0.2 and 1.2 eV by means of positron lifetime spectroscopy. For photon energies between 0.25 and 0.65 eV and above 0.75 eV, negatively charged vacancies were formed, whereas in the 0.65 to 0.75 eV range there was no effect from illumination. The results are explainable on the basis of Watkins and Corbett's model of divacancy [Phys. Rev. 138, A543 (1965)]. Evidence was found that the radioactive positron source significantly reduces the stability of the photon-induced population of negatively charged divacancies, an effect which is invoked to explain the apparently anomalous results reported by Kawasuso and Okada [Jpn. J. Appl. Phys., Part 1 36, 605 (1997)].
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