Abstract
ABSTRACTThe use of positron annihilation to study vacancy defects and some recent results are reviewed. For metals, theoretical calculations have reached the leyel where they can reliably predict lifetime values of positrons trapped at vacancy defects of various size, geometry and impurity environment. Experimental results are shown on vacancy recovery and vacancysolute interaction in electron irradiated Fe, Nb, and Ta. During last years the technique has been applied also to semiconductors. Positron trapping in Si is discussed and some results are given on native and irradiation induced vacancies in GaAs. A beam of slow positrons is a new tool to probe nearsurface regions and thin films. Examples are shown on Mo(111) surface sputtered with Ar+ ions and on Si(100) implanted with 35 keV H+ ions.
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