Abstract
The positron lifetime spectroscopy indicates that the V- and V 2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some specific vacancy-type defects. Hydrogen influences strongly the annealing of the V-type defects below 200°C. Some bigger vacancy-clusters appear at 550°C. At 600–650°C the V-type defects reappear due to break of Si H bonds. At 750–800°C a lot of dislocations and/or V-type defects are produced. The positron annihilation behavior of vacancy-type defects agrees with that of the S-parameters.
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