Abstract
Positron annihilation spectroscopy (PAS) is known as a powerful nondestructive technique for research in solids. Because positrons annihilate mostly in localized sites, their annihilation characteristics reflect the electronic structure of such sites. This is the basis for the applications of positron annihilation in the studies of various kinds of lattice defects in metals and semiconductors [1]. Due to the positive charge of positrons the annihilation technique is selectively sensitive to negatively charged and neutral vacancy-type defects. The electron density and average electron momentum in a vacancy are lower than those in the interstitial regions of the perfect lattice. Therefore, the annihilation characteristics: mean lifetime and angular correlation of annihilation radiation of positrons trapped at vacancy differ from those for positrons that annihilate in the perfect crystal. The sensitivity of the PAS technique to open-volume defects is excellent: in semiconductors defect concentrations of the order of 0.1 ppm or less can be detected by this method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
