Abstract
AbstractPositron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a‐Si:H) absorber layers fabricated by the PE‐CVD method with typical thicknesses of 300‐500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen‐to‐silane flow ratio during their deposition, related to hydrogen‐induced changes in the microstructure and local composition at the positron trapping site. Light‐soaking degradation induces a time‐dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT‐Photocurrent Spectroscopy measurements. (© WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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