Abstract
Positron and positronium annihilation in silica-based thin films has been investigated by means of measurement techniques with a monoenergetic pulsed positron beam. The age–momentum correlation study revealed that positron annihilation in thermally grown SiO 2 is basically the same as that in bulk amorphous SiO 2 while o-Ps in the PECVD grown SiCOH film predominantly annihilate with electrons of C and H at the microvoid surfaces. We also discuss time-dependent three-gamma annihilation in porous low- k films by two-dimensional positron annihilation lifetime spectroscopy.
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