Abstract
Positivity preserving discretization of the semiconductor drift–diffusion equations is considered. The equations are spatially discretized by mixed hybrid finite elements leading to a positive ODE or DAE system with index of at most one. For time discretization a second-order splitting technique based on a combination of explicit exponential integration and implicit one-step methods is proposed. This allows for positivity preservation with larger time steps than the corresponding one-step methods. An algorithm is presented coupling the splitting technique with the Gummel iteration scheme allowing for efficient positivity preserving device simulation. Numerical results for a one-dimensional pn-diode are given, showing that the proposed scheme allows for runtime acceleration.
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