Abstract
The positive temperature dynamics in the near-band-edge (NBE) photoluminescence (PL) of Nb-doped SrTiO3 single crystal have been investigated in the temperature range of 10 K–120 K. Intensity of the NBE PL emission with a peak at 3.21 eV has shown increase with increasing temperature. This NBE PL consists of two emission lines with peaks at 3.208 and 3.167 eV. The thermal dynamic in the intensity of the 3.21 eV emission was mainly defined by the temperature behavior of the 3.208 eV transition. The increase in the intensity of the 3.208 eV line with increasing temperature was associated with an increase in the number of electrons thermally excited from the surface. Additionally, a critical point in intensity of the PL at 3.21 eV can be caused by the phase transition, which occurs in Nb-doped SrTiO3 at 115 K.
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