Abstract

We study the magnetoconductance and dephasing in a strongly localized regime in black phosphorus (BP) devices. The phase coherence length, lφ obtained from the magnetoconductance follows a temperature dependence of T–1/3 in the strongly localized regime with kFle < 1 (ξ < lφ) based on the Ioffe–Regel criterion. Here kF, le and ξ are the Fermi wave vector, mean free path and localization length, respectively. The conductance behavior as a function of temperature confirms that the transport regime of our BP is in a variable‐range‐hopping regime, which results in the strongly localized regime.

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