Abstract
The Hall effect of homogeneous amorphous Be films of thickness 25–100 nm stabilized with hydrogen impurity is investigated at 10 K<T<50 K. The value of Hall coefficient estimated as RH=+(1.1±0.2)×10−10 m3/C is found to be independent of temperature and sample thickness. This is the first consistently repeatable observation of positive Hall effect in a homogeneous nontransition amorphous metal. The observed effect contradicts the predictions of the theory that the Hall effect in nontransition amorphous metals must be negative.
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