Abstract
Origin of constant positive gate bias stress instability in amorphous In-Ga-Zn-O thin-film transistor is studied. Threshold voltage shift (AV th ) during the stress test exhibits two different behaviors: 1) a power function-type and 2) a logarithmic function-type depending on thermal treatment atmosphere and temperature. Thermal desorption spectroscopy indicated that the AVth behavior changes from the log-function type to the power-function type as the amount of H 2 desorption increases. Furthermore, the recovery behavior of ΔV th was not affected by gate bias. These results are explained by a diffusionlimited process of neutral hydrogen, which occurs within 2 nm in the vicinity of the channel-insulator interface.
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