Abstract
In this research, 1-diode (1D), 1-resistor (1R), and 1D1R stacked devices were separately fabricated using a 400 nm diameter hole substrate. It was observed that, in 1D1R, there was a fivefold increase in endurance and 52% improvement in the resistance distribution characteristics compared to those of 1R. It could be surmised that the stacked diode not only plays the role of a selection device to minimize the interference in the crossbar array type resistive switching device but also acts as an external load resistor to suppress the unexpected current overflow during resistance transition. These experimental results demonstrated that the optimized diode shows significant promise as a unidirectional resistive switching device for memory-related applications.
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