Abstract
At the INFN Legnaro Laboratories (Padova, Italy), an ion electron emission microscope dedicated to the study of radiation-induced damage in microelectronic devices has been recently installed. It is used to recognize, with micrometric resolution, the impact point of every single ion into the target. The development of the readout system for this apparatus led to the construction of two photon position sensitive detection (PSD) systems: the first is based on a classic semiconductor PSD sensor; the second developed around a new design that mixes two linear CCD arrays and optics to provide superior performances. This paper focuses on the temporal and spatial performances, we require from the two different kinds of sensors.
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