Position-controlled epitaxial III–V nanowires on silicon

Abstract

We show the epitaxial integration of III–V semiconductor nanowires with silicontechnology. The wires are grown by the VLS mechanism with laser ablation as well asmetal–organic vapour phase epitaxy. The hetero-epitaxial growth of the III–V nanowires onsilicon was confirmed with x-ray diffraction pole figures and cross-sectional transmissionelectron microscopy. We show preliminary results of two-terminal electrical measurementsof III–V nanowires grown on silicon. E-beam lithography was used to predefine the positionof the nanowires.