Abstract
Accurately modeling the behavior of a beam of positrons incident upon a solid is of crucial importance for depth-profiling and data analysis in slow positron experiments. We describe a suite of Fortran programs to perform a Monte Carlo calculation of positron implantation in amorphous metals and small bandgap semiconductors. This provides statistical information about penetration (stopping profiles, thermalization time, etc.), energy loss and reemission (backscattering, thin film transmission, etc.). The calculation is implemented using a user-friendly Monte Carlo transport “engine”, which is capable of treating particle transport in infinite, semi-infinite, and multilayer systems. A contingent of elastic (up to 10 keV) and inelastic (down to 30 eV) scattering mechanisms is included, but different mechanisms can be added via external data files or code modification. As a consequence of the scattering theory involved, this calculation is amenable to electron implantation and scattering.
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