Abstract
Porous organosilicate thin films (SiOCH) deposited by plasma-enhanced chemical vapor deposition (PECVD) are used as dielectric layers in advanced microelectronic interconnections and as chemical layers in chemical sensors and biosensors. One challenge is to increase the porosity in these films, the classical method being limited to porosity rate close to 50%. In this paper, we report an innovative and simple strategy to perform highly nanoporous SiOCH thin films without the use of any templates or external blowing agents. This approach uses a SiOCH deposited by PECVD (without any porogens) intentionally covered by a dense crust. The porosity generation is obtained through an ultraviolet (UV)-assisted thermal annealing of the stack. The highest porosities ever demonstrated for SiOCH PECVD thin films are obtained (porosity close to 65%). The impact of different process parameters (choice of precursor, deposition, and annealing conditions) on the creation of porosity is studied. The porosity introduction wit...
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