Abstract
Porous silicon (PS) layers are prepared by anodization fordifferent etching current densities. The samples are thencharacterized the nanocrystalline porous silicon layer by X-RayDiffraction (XRD), Atomic Force Microscopy (AFM), FourierTransform Infrared (FTIR). PS layers were formed on n-type Siwafer. Anodized electrically with a 20, 30, 40, 50 and 60 mA/cm2current density for fixed 10 min etching times. XRD confirms theformation of porous silicon, the crystal size is reduced towardnanometric scale of the face centered cubic structure, and peakbecomes a broader with increasing the current density. The AFMinvestigation shows the sponge like structure of PS at the lowercurrent density porous begin to form on the crystalline silicon, whenthe current density increases, pores with maximum diameter areformed as observed all over the surface. FTIR spectroscopy shows ahigh density of silicon bonds, it is very sensitive to the surroundingambient air, and it is possible to oxidation spontaneously.
Highlights
Crystalline silicon (C-Si) is one of the important material of the last century that has been the corner stone of the semiconductor industry and has spear headed extraordinary technological advancement
X-Ray Diffraction (XRD) confirms the formation of porous silicon, the crystal size is reduced toward nanometric scale of the face centered cubic structure, and peak becomes a broader with increasing the current density
The surface morphology properties prepared by Photo electrochemical etching (PECE) technique of (111) n-type silicon wafer was investigated using Atomic Force Microscopy (AFM)
Summary
Porous silicon (PS) layers are prepared by anodization for different etching current densities. The samples are characterized the nanocrystalline porous silicon layer by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR). Anodized electrically with a 20, 30, 40, 50 and 60 mA/cm current density for fixed 10 min etching times. XRD confirms the formation of porous silicon, the crystal size is reduced toward nanometric scale of the face centered cubic structure, and peak becomes a broader with increasing the current density. The AFM investigation shows the sponge like structure of PS at the lower current density porous begin to form on the crystalline silicon, when the current density increases, pores with maximum diameter are formed as observed all over the surface. Nanostructure materials, AFM, XRD, FTIR, Crystalline silicon. الخلاصة ،في ھذا البحث تم تحضير طبقات السيليكون المسامي التركيب بطريقة التنميش بالليزر لكثافات تيار مختلفة تحويل فورير، مجھر القوة الذرية،شخصت خصائص العينات المحضرة بواسطة فحص حيود الأشعة السينية 20, للأشعة تحت الحمراء حيث ان طبقات السيليكون المسامي تتكون على السطح حيث يتم تأينھا بتيارات مختلفة من خلال فحص حيود الاشعة السينية يؤكد تكوين.10 min ( لزمن تنميش30, 40, 50, 60 mA/cm2) ولوحظ ان القمة تزداد في العرض بزيادة،السيليكون المسامي وان الحجم البلوري يقل باتجاه الاحجام النانوية من خلال مجھر القوة الذرية تبين ان عند التيارات الواطئة تبدأ طبقات السيليكون المسامي بالتكون.تيار التنميش من خلال تحويل فورير للأشعة تحت.وعند زيادة تيار التنميش سنحصل على اعرض قطر مسامي على السطح الحمراء تبين وجود أواصر كثيفة خاصة بالسيليكون حيث ان ھذه الاواصر تكون قابلة للتأثر بالبيئة والھواء
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