Abstract
Porous silicon and its oxide can be converted into porous silicon oxynitrides by ammonia heat treatment. For example, ammonia treatment at 1000 °C for 1 h following 850 °C, 30-min steam oxidation of porous silicon can result in up to 40 at. % nitrogen in the porous oxynitrides. These porous silicon oxynitrides are compositionally more uniform than ammonia-nitrided thermal oxides which exhibit nitrogen buildup at the oxide layer interfaces. However, the order of the oxidation and nitridation treatment matters: nitrided oxidized porous silicon exhibits higher electrical breakdown strength than nitrided porous silicon or oxidized nitrided porous silicon.
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