Abstract
Ferromagnetic nanostructures have been electrodeposited within the pores of porous silicon templates with average pore diameters between 25 and 60 nm. In this diameter regime, the pore formation in general is accompanied by dendritic growth resulting in rough pore walls, which involves metal deposits also offering a branched structure. These side branches influence the magnetic properties of the composite system not only due to modified and peculiar stray fields but also because of a reduced interpore spacing by the approaching of adjacent side pores. To improve the morphology of the porous silicon structures, a magnetic field up to 8 T has been applied during the formation process. The magnetic field etching results in smaller pore diameters with less dendritic side pores. Deposition of a ferromagnetic metal within these templates leads to less branched nanostructures and, thus, to an enhancement of the coercivity of the system and also to a significantly increased magnetic anisotropy. So magnetic field-assisted etching is an appropriate tool to improve the structure of the template concerning the decrease of the dendritic pore growth and to advance the magnetic properties of the composite material.
Highlights
IntroductionThe demand on nanostructured materials increased enormously because of the miniaturization of devices and because of the appearance of modified physical properties of nanosized objects compared to their bulk material
In recent years, the demand on nanostructured materials increased enormously because of the miniaturization of devices and because of the appearance of modified physical properties of nanosized objects compared to their bulk material
Holes moving in the growth direction of the pores contribute to the formation process, whereas holes with a direction that deviates from the growth direction feel the Lorentz force, which is induced by the applied magnetic field and do not contribute to the dissolution of the silicon. This experimental arrangement results in smaller pore diameters and smoother pore walls compared to conventional etching with adequate electrochemical parameters [10]
Summary
The demand on nanostructured materials increased enormously because of the miniaturization of devices and because of the appearance of modified physical properties of nanosized objects compared to their bulk material. The possibility of achieving straight pores renders porous silicon a good. The fabrication of specimens with specific magnetic properties can be reached due to the possibility of modifying the geometry and the packing density of the precipitated metal nanostructures as well as of varying the morphology of the template [7]. The metal wires interact dipolarly within the pores and between adjacent pores, depending on the pore distance. To enhance this anisotropy, the magnetostatic interactions between adjacent pores have to be decreased
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