Abstract
A high power oscillation occurring on a porous silicon diode with an obvious dc N-shaped negative differential resistance (NDR) at room temperature is presented for the first time. The voltage oscillation swing was up to 12.4 V and oscillation frequency was 101.3 kHz, which belongs to the radio frequency range. The oscillation was based on a porous silicon superlattice diode structure, which was observed to provide a stable NDR with a high peak-to-valley current ratio as high as 7.9 for dc current–voltage characteristics at room temperature. A superlattice diode structure was formed by an electrochemical etching method on an n-type (100) silicon wafer with an alternating etching current. In addition, a dc constant current source was used as the power supply for the diode oscillation. In particular, two steady operating points were observed for the dc NDR current–voltage characteristics of the circuit load line. The system produced a steady oscillation between these two operating points in a harmonic form.
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