Abstract
In this paper the porous silicon sample prepared by stain etching using FeCl3 oxidizing agent has been discussed. The photoluminescence spectra exhibited a weak peak in red region, a prominent peak in blue region of visible range and an intense peak is also observed at 234 nm. Morphology studied by SEM revealed the luminescent centres and nanostructures formed by stain etching which are responsible for photoluminescence.
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