Abstract
In this paper the porous silicon sample prepared by stain etching using FeCl3 oxidizing agent has been discussed. The photoluminescence spectra exhibited a weak peak in red region, a prominent peak in blue region of visible range and an intense peak is also observed at 234 nm. Morphology studied by SEM revealed the luminescent centres and nanostructures formed by stain etching which are responsible for photoluminescence.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
