Abstract
n and p types of porous silicon were fabricated using two methods electrochemical etching EC and photo-electrochemical etching PEC. Structural studies of both types of porous silicon were carried out by X-Ray Diffraction XRD getting 24.5 nm crystallite size in p-PSi and 28.05 nm in n-PSi, AFM, Fourior-Transformation InfraRed FT-IR.
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