Abstract
The electrical properties of the solid state/fluid (Ringer solution) interface for phosphorous- and boron-doped porous silicon are reported and the benefits of using porous silicon as neural recording electrodes are discussed. The impedance, reactance and resistance for doped porous and planar silicon, in Ringer solution, were compared to gold electrodes. Planar silicon displayed approximately a three times higher reactance than porous electrodes. The phosphorous-doped porous electrodes displayed a similar reactance compared to the gold electrodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
