Abstract
ABSTRACTPossible applications for porous SiC (PSC) are addressed and related innovative aspects discussed. The formation and properties of PSC itself are considered first, since they define the area where PSC can be used. Then epitaxial growth on PSC substrates is reviewed in detail, with the emphasis on the chemical vapor deposition (CVD) technique. Next, new applications featuring the in-diffusion of V and Si into PSC for obtaining semi-insulating material and autodoping of GaN epitaxial layers from PSC substrates are presented.
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