Abstract

The public concern about sulfur hexafluoride (SF6) emission has driven the exploration of related removal processes via adsorptive separation technology. Based on task-specific porous materials, the capture of SF6 achieves lower energy consumption and less carbon footprint. Herein, four HF resistant porous aromatic frameworks (PAF-XJTU-1 to PAF-XJTU-4) with robust CC linkage were prepared for the separation of SF6 in semiconductor etching exhaust. Single-component gas adsorption and IAST selectivity confirmed the separation performance of the four PAFs materials under elevated pressure (10 bar). Moreover, DFT studies revealed the nonnegligible SF6 intermolecular interaction in PAFs at elevated pressure. Under the dynamic scenario, breakthrough experiments proved the effective capture of SF6 in PAF-XJTUs.

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