Abstract

Antimony doped porous alumina film deposited over indium tin oxide (ITO) coated glass substrate can be helpful in the thermophotovoltaic system. The film pore dimensions of the system developed are: pore radius of 200–400 nm, pore height ∼200 nm, inter pore distance ∼400 nm, and pore wall thickness ∼80 nm. These dimensions match to a large extent of specially prepared design values of optimized HfO2-filled photonic crystal for cutoff wavelength (λc) of 1.70 μm. The X-ray diffraction analysis of the synthesized films reveals direct evidence that crystalline alumina coexists with ITO. The trace amount of antimony was detected by X-ray photoelectron spectroscopic analysis. However, other optical analysis techniques, e.g., absorbance and photoluminescence, cannot detect such a trace amount. The developed thermophotovoltaic film was applied to cover the top surface of silicon solar panels. The output voltage of the panel was compared to that of panel without thermophotovoltaic film. The transient voltage response of the covered panel after several measurements confirms an increase in voltage (∼0.15 V) with VOC = 10 V and ISC = 0.4 Amp under solar radiation of ∼600 W/m2. The increase in voltage by applying the thermophotovoltaic film is a novel outcome and has immense potential for industrial application in the future.

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