Porous AlN with a Low Dielectric Constant Synthesized Based on the Physical Vapor Transport Principle

Abstract

Porous AlN with low dielectric constant has been synthesized by the sacrificial template method based on the physical vapor transport principle. It is quite different from the traditional method that mixes the matrix with a pore-forming agent and utilizes liquid-phase sintering. The method consists of two parts. Firstly, AlN powder is placed in a graphite crucible. C/AlN composite can be formed by mixing decomposed AlN vapor and volatile carbon originated from a crucible at high temperature. Secondly, pores are formed after removing carbon from the C/AlN composite by an annealing process. The structure, morphology, porosity and properties of porous AlN are characterized. It is shown the obtained porous AlN has a thermal conductivity of 37.3 W/(m K) and a reduced dielectric constant of 5.5–6.1 (at 1 MHz). The porosity measured by a mercury porosimeter is 24.09%. It has been experimentally proved that porous AlN with a sufficiently porous structure and properties can be synthesized based on the vapor-phase principle.