Abstract
On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nanolaser that operates at room temperature with a low threshold of 1.69 pJ and a large spontaneous emission factor of 0.04. An epitaxial scheme to grow relatively thick InP nanowires on (001) silicon is developed. The zincblende/wurtzite crystal phase polytypism and the formed type II heterostructures are found to promote lasing over a wide wavelength range.
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