Polytype stability and defects in differently doped bulk SiC

Abstract

In this work, we present recent results on development and production of n-type 4 H bulk material. From previous studies it is evident that inclusions of foreign polytypes can act as origin of severe structural imperfections [N. Schulze, D.L. Barret, G. Pensl, S. Rohmfeld, M. Hundhausen, Mater. Sci. Eng. B 61–62 (1999) 44; D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P.J. Wellmann, A. Winnacker, Mater. Sci. Eng. B 61–62 (1999) 48], accompanied by defects like micropipes, stacking faults and dislocations. For that reason, we have carried out investigations to sustain polytype stability throughout the entire process, including nucleation and subsequent growth. Assisted by numerical calculations the influence of growth conditions, especially with respect to thermal field, Si/C ratio and doping, was examined. Several methods for the evaluation of material properties were applied to determine the quality most precisely, e.g. KOH-defect etching, optical microscopy, electron microscopy, X-ray diffraction and resistivity mapping. The key experience we gained was that moderate growth conditions with reduced temperature gradients are only one prerequisite for the reduction of defect density. Also stoichiometry in the gas phase and its modulation by nitrogen doping have to be taken into account and must be adjusted on the prevailing growth regime. We finally identified an optimized process that initiated a considerable improvement of material quality. Best values for 3″ 4 H wafers show that EPD<5×10 3 cm −2 and MPD<0.1 cm −2 can be achieved.