Abstract
A thin-film transistor (TFT) with high carrier mobility has been fabricated using precursor-route poly(2,5-thienylenevinylene) (PTV) as semiconductor. The carrier mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the carrier mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to π-conjugated PTV. The π-conjugation length is crucial to obtain high carrier mobility in π-conjugated polymer TFT.
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