Abstract
The T-x diagram of the polythermal section Ge-SnAs of the Sn-As-Ge system was constructed using the results of X-ray powder diffraction and differential thermal analyses. It was found that the Ge-SnAs section is not quasi-binary. In the ternary system, two four-phase peritectic transformations occur: L + GeAs ↔ Sn4As3 + Ge at 821 K and SnAs ↔ Sn4As3 + GeAs at 834 K.
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