Abstract
The extrinsic base diode minority carrier distribution under poly in I2L transistors can be calculated (or computed) in terms of an effective surface recombination velocity Seff at the mono/poly silicon interface similar to the oxide and metal cases. An analytical expression for Seff as a function of polysilicon parameters is given and compared to numerical solutions. Calculated ring speeds show a slight improvement in propagation delay for metal contact compared to poly contact.
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