Abstract
A series of sensitizing additives for polysilane bilayer photoresists have been identified. These compounds effectively quench the fluorescence of aromatic polysilanes and greatly increase the rate of photooxidation and spectral bleaching in the solid state. Resists formulated with sensitizers such as phthalimidotriflate show increased photospeed in imaging experiments at both 248 and 193nm. Characteristics of the resist reactions are described.
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