Abstract
Polysilane-inserted CH3NH3PbI3 perovskite photovoltaic devices combined with potassium and formamidinium iodides were fabricated and characterized. Decaphenylcyclopentasilane layers were inserted at the perovskite/hole transport interface and annealed across a temperature range of 180–220 °C. These polysilane-coated cells prevented PbI2 formation, and the conversion efficiencies were improved over extended periods of time.
Highlights
The most commonly used solar cells are currently silicon-based, these silicon devices have a complicated fabrication process, and the silicon semiconductor has an indirect transition band structure
2,20,7,70 -tetrakis(N,N-di-p-methoxyphenylamine)-9,90 -spirobifluorene is widely applied as a hole transport layers (HTLs) for perovskite photovoltaic devices; this material is expensive, and the electronic properties degrade at elevated air temperatures
Conversion efficiencies and other parameters of the present perovskite solar cells are summarized in Table 1, where η is the photoconversion efficiency, ηave is the average conversion efficiency of the three devices, V OC is the open-circuit voltage, JSC is the short-circuit current density, Rsh is the shunt resistance, RS is the series resistance, and FF is the fill factor
Summary
The most commonly used solar cells are currently silicon-based, these silicon devices have a complicated fabrication process, and the silicon semiconductor has an indirect transition band structure. Since recently developed CH3 NH3 PbI3 (MAPbI3 )-based perovskite compounds have demonstrated numerous advantages, such as direct bandgaps, easy fabrication process, and high conversion efficiencies [1,2,3,4], these compounds are considered as major candidates for next-generation solar cell materials. Poly(methyl methacrylate) and poly(propylene carbonate) have been used to protect the perovskite layer from oxygen and moisture [15,16] and to enhance stability. Both polymeric materials formed cross-linked networks comprising perovskite grains, which suppressed defects. Alternative hole transport materials have been reported [18,19], and polysilane derivatives have been investigated [20]
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