Abstract
A polyphenol-based positive electron-beam (EB) resist with large absorption at the 248-nm wavelength has been developed as a photo mask for use in KrF lithography. A 1-ethoxyethyl-protected polyphenol compound, TPPA-1000P, was attached to 2-hydroxy- 3-naphthoic acid as a chromophore by esterification using dicyclohexylcarbodiimide. The amount of chromophore attached and the degree of protection were optimized in the positive-resist base resin. The resist, which consisted of the optimized resin and triphenylsulphonium hexafluoroantimonate, produced 0.25-μm rectangular line/space patterns on a silicon substrate at a dose of 12μC/cm2 (75 kV), and a 0.8-μm space pattern on a quartz-mask substrate at a dose of 14 μC/cm2 (50 kV). The absorbance of the resist was 9/μm at the 248-nm wavelength.
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