Abstract

We describe the fabrication and performance of a thin-film electro-optic Fabry-Perot modulator operating in reflection, at wavelengths compatible with silicon detectors, fabricated on a silicon substrate. A nonlinear polymer is used with a low dielectric constant that permits an electrical bandwidth in excess of 100 MHz with low modulating energy. Existing thin-film fabrication techniques and materials are used to demonstrate device performance. We report modulation of approximately 1.5% and describe foreseen improvements in nonlinear polymers and technology which promise in excess of 5% modulation with a 5 V modulating voltage. >

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