Abstract
valuesoriginatefromthelossofchargecarriersthroughleakagepathsincluding pinholes in the films and the recombination andtrapping of the carriers during their transit through the cell,leading to a decrease in device performance.Modification of electrodes has been commonly employed toimprove the contact between the active organic layer andelectrodes. At the indium tin oxide (ITO) anode side, a thinbuffer layer of a conductive polymer, poly(3,4-ethylene-dioxylene thiophene):poly(styrene sulfonic acid) (PED-OT:PSS), is often used to increase the work-function of ITOfor effective hole collection.
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