Abstract
During via and trench plasma etching in dual damascene copper interconnects process integration, polymer residues and copper damage were created as by-products of the dry-etch process. The polymer residue chemical composition and copper damage were analyzed by Auger electron spectroscopy. Analysis result indicated that besides copper, carbon, oxygen, and nitrogen and trace amounts of chlorine and sulphur were also observed. The polymer residue and copper damage are the important reasons of cause higher via contact resistance and lower via yield. It could be reduced and eliminated effectively using optimized plasma etch recipe, improved polymer residue removal methods and improved pre-treatment before metal deposition and so on.
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