Abstract
Abstract Optical modulators are vital for many applications, including telecommunication, data communication, optical computing, and microwave photonic links. A compact modulator with low voltage drive requirement, low power, high speed, and compatibility with CMOS foundry process is highly desirable. Current modulator technologies in Si suffer from trade-offs that constrain their power, performance (speed, drive voltage), and area. The introduction of additional materials to the silicon platform for efficient phase shift promises alternatives to relax those trade-offs. Si-organic-hybrid (SOH) devices demonstrate large modulation bandwidth leveraging the electro-optic (EO) effect and smaller drive voltage or footprint owing to a strong EO coefficient. In this study, we review various SOH modulators and describe their path towards integration to silicon, including their challenges associated with aging and temperature. We also briefly discuss other high-performance modulators such as plasmonic-organic-hybrid (POH), photonic-crystal-assisted SOH, and LiNbO3.
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