Abstract
Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm2 V-1 s-1.
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