Abstract
This paper presents the manufacturing of high-performance millimeter wave lumped elements on polyimidemembranes obtained by micromachining of semi-insulating GaAs.The microwave performances of the devices are compared withthose obtained for similar structures manufactured on SiO2/Si3N4/SiO2 membranes on siliconmicromachined substrates, as well as with the performances ofsimilar devices manufactured on bulk GaAs and high-resistivitysilicon. S parameter analysis and the computed lumpedequivalent circuit emphasize the substantial decrease in theparasitic capacitances and, as a result, the outstandingimprovement in the resonant frequency of membrane supportedinductors. Comparative analysis of roughness and planarity ofboth types of micromachined structures was also performed.Polyimide membranes manufactured on GaAs substrate haveproved to be a very good support for millimeter wave circuitelements, both from mechanical as well as electrical points of view.
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