Abstract

AbstractMemristive devices have shown promising applications in various fields (e.g., non‐volatile memory, reconfigurable switches, and bio‐inspired neuromorphic computing). Despite the significant advances in this field, the exploration of nanomaterials with tunable composition, thickness, dimension, and conductivity for memristive devices is still in great necessity. Here, the transformation of the ultrathin film polydopamine (PDA) obtained at air/water interface from amorphous to quasi‐ordered structure is revealed. Owing to the unique feature, the self‐assembled PDA film at air/water interface is firstly employed as the active material in constructing write‐once‐read‐many‐times (WORM) memory devices. With an increase in the applied electric field, the device shows a switching from high resistance state (HRS, OFF state) to low resistance state (LRS, ON state) with a high ON/OFF current ratio of >103. Furthermore, the abundant amidogen and phenolic hydroxyl group enable the in situ Ag nanoparticle decoration on the PDA film, which can be further used in the construction of anisotropic volatile memristors with a high ON/OFF current ratio (>104), exceptional stability and good integrability.

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